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HfTiON gate dielectric is fabricated by reactive co-sputtering method followed by annealing in N2 ambient. The effects of Ti content and annealing temperature on the performances of HfTiON gate-dielectric Si MOS devices are investigated. Experimental results indicate that gate capacitance is increased with increasing Ti content. However, when the Ti/Hf ratio exceeds ~1.75, increase of the gate capacitance...
Si MOS capacitors with HfTa oxide and oxynitride as gate dielectric were fabricated. Moreover, AlOxNy or TaOxNy was used as the interlayer between HfTa oxynitride and Si substrate to improve the electrical quality of the capacitors. Experimental results showed that the HfTaOxNy capacitor with TaOxNy interlayer achieved better performance with larger capacitance and smaller leakage current than its...
The electrical characteristics of germanium p-metal-oxide-semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO2/TaOxNy are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO2 as gate dielectric, good interface properties, good transistor characteristics, and about 1.7-fold...
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