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InAsP quantum dot (QD) lasers emitting between 660–775nm with 300K threshold current density of 260 Acm−2 for 2mm long uncoated facet devices and operation up to 380K are compared to InP QD lasers emitting at shorter wavelength.
Reductions in non-radiative recombination and αi with increasing Ga composition of the upper-confining-layer in InP self-assembled quantum-dot lasers reduce threshold-current-density and temperature dependence. Carrier population of 2-D layers limits further improvement at higher Ga compositions.
We demonstrate the p-doping effect on lasing output and threshold current density. The lasing wavelength peak became narrower as the doping concentration increases and has a red shift which consistent with optical absorption ground state.
We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750??C to 690??C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the...
We investigate growth and wafer design improvements with two barrier widths each grown at different temperatures to optimise room temperature threshold current density for 2 mm long lasers with uncoated facets. We explain this using sophisticated optical and electrical characterisation.
We describe the optimization of InP quantum dot material for laser applications, demonstrate some of the interesting physics that results from the nature of this material and describe initial results in promising application areas.
We demonstrate the origin of, and quantify the contributions to, the poor external differential efficiency we observe in InP quantum dot lasers. Injection efficiency limits the internal differential quantum efficiency to 50%.
We describe growth and wafer design improvements to reduce 300 K threshold current density to 165 Acm-2 for 2 mm long laser with uncoated facets and, using sophisticated optical and electrical characterisation, we demonstrate how this is achieved.
We demonstrate MOVPE grown InP q-dot lasers with low threshold current density (195 Acm-2 for 2000 mum long uncoated devices at 300 K) and extended wavelength-coverage (680-740 nm). Modulation p-doping reduces gain saturation in lower confinement structures.
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