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Ballistic transport in III–V semiconductors-based p-channel double-gate MOSFETs is theoretically evaluated. The valence band structure is calculated by solving the eight-band ${k} \cdot {p}$ Schrödinger and the Poisson equations self-consistently. A semiclassical ballistic model is employed to assess the hole transport properties. Ballistic characteristics are analyzed as a function of channel material,...
Strain effects on valence band structure in bulk and thin film In0.7Ga0.3As was presented, including in-plane biaxial and uniaxial stress. The impact on energy band splitting and warping, and effective mass are evaluated by 6×6 k·p method. The dependence of the valence band structures on the body thickness was also studied.
We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6times6 kldrp model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to Gamma point, and the effective masses of more subbands begin to decrease when the shell thickness...
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