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As MOSFETs scaling down to nano-scale, short channel effect(SCE) become a critical issue. Multiple channel MOSFET structure such as FINFET has well gate controllability on channel charge, and will be used in nano-scale CMOS technology. In this work the performance of 20nm bulk FINFET is investigated by Using 3D full band Monte Carlo Method with Effective Potential Quantum Correction. Gate and drain...
Lightly doped or even intrinsic channel can be used in SOTB MOSFETs and therefore very Low RDF (random dopant flunctuation) can be expected in such devices. In this work, we systematically investigated the influences of the intrinsic parameter fluctuations, including LER (line-edge-roughness), STV (silicon thickness variation) and WFV (metal-gate work-function variation), on 20nm-gate intrinsic SOTB...
Statistical 3D TCAD simulations of 20nm gate SOTB MOSFETs have been done to study the effects of TBox, Vback-gate and WF on LER-induced variability. Our results show that thin box, reverse back-gate bias and high WF are effective ways to control the LER-induced threshold voltage's variations, especially for n-SOTB MOSFETs.
3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20 nm FinFETs SRAMpsilas sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under...
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