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In this paper, the fluctuation of random interface traps (RITs) and its interaction with random dopants of 22-nm junctionless FETs (JL-FET) with high-/metal gate (HKMG) are investigated with 3-D statistical TCAD simulations. The impacts of RIT and random dopant fluctuation (RDF) on the performances of JL-FET are evaluated separately and together. The results show that acceptor-like interface traps...
Rough sets serves as a tool for data analysis and knowledge discovery from data databases. Attribute reduction is a basic issue in knowledge representation and data mining. This paper deals with distribution reduction in an inconsistent interval ordered information systems. The distribution reduction and maximum distribution reduction are proposed in inconsistent interval ordered information systems...
Strain effects on valence band structure in bulk and thin film In0.7Ga0.3As was presented, including in-plane biaxial and uniaxial stress. The impact on energy band splitting and warping, and effective mass are evaluated by 6×6 k·p method. The dependence of the valence band structures on the body thickness was also studied.
Quasi-ballistic asymmetric DG-MOSFET has been simulated using a multi-subband Boltzmann transport equation solver and important parameters regarding to back-scattering at the top of barrier are carefully studied in this work. It is observed that the simulated results are in good agreement with established theory and phonon scattering still plays an important role in limiting the performance of MOSFET...
Satisfactory solutions of interval programming and interval linear bi-level programming are defined based on a new partial order on intervals. The optimality condition for interval programming is investigated. Based on K-T optimality condition, satisfactory solution of interval linear bi-level programming is obtained from a bi-objective programming. Finally, a numerical example is presented.
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