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A wafer level bonding technique by localized induction heating has been developed and demonstrated in this paper. A suitable fabrication process scheme has also been established for the localized induction heating and bonding. It takes only about 20 seconds to complete the bonding process. The temperatures of solder loops and the central area of solder loops are above 300°C and below 70°C, respectively...
Localized induction heating for wafer level packaging is discussed. This paper is to investigate the relationships between the geometry of solder loop and temperature distribution in induction heating. Using finite element method (FEM) and IR thermal imager, temperature distribution and variation are explored, which shows that the temperature on the solder loops is a function of the area and edge...
Selective induction heating for wafer level bonding is presented. The purpose of this paper is to investigate the relationships between the geometry of solder loop and temperature distribution in induction heating. Using finite element method (FEM) and IR thermal imager, temperature distribution and variation are explored, which shows that the temperature on the solder loops is a function of the area...
In this paper, a non-linear and one-directional coupled finite element framework has been implemented to simulate induction heating process of wafer-level packaging. Based on numerical results of induction heating, thermally-caused warpages and stresses of the single-sided ceramic wafer have been evaluated. Some primary experiments have also been conducted to verify the numerical method. Using three-dimensional...
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