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Multi-gate FETs are promising for sub-45nm CMOS technologies. To address the link between design and technology, basic digital and analog circuits are fabricated using FinFET and triple-gate FETs. Digital circuit performance, leakage currents, and power dissipation are characterized. The triple-gate FET achieves the lowest gate delay (27ps at 1.2V) and is >30% faster than FinFET with same oxide...
The present work is focussed on the trade off between conventional RF ESD protection concepts optimized in terms of capacitive load and the frequently discussed RF ESD codesign idea with ESD protection skilfully integrated into RF circuit design. A narrow and a broadband RF test circuit were developed to put the benchmark on a firm basis. RF and ESD experiments are discussed, showing where the higher...
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