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Molybdenum-Tungsten (MoxW) alloy films were deposited on SiO2 substrates by reactive sputtering. Direct electroplating Cu on Molybdenum-Tungsten alloy films and annealing in N2 were carried out. In this study, the effect of electroplating time and annealing temperature on the structural, plating and wetting ability of Molybdenum-Tungsten alloy films was investigated. The films were characterized by...
MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO...
In this study, CoW alloy co-sputtered with various conditions was investigated as a Cu diffusion barrier to replace the conventional Cu seed/liner/barrier structure. By fabricating Cu/CoW/Si stacks, we found that under certain Co/W ratio, CoW layers showed similar wetting ability with Ta and can avoid Cu diffusion up to 570 °C for 56 min. Furthermore, Cu was found capable to be directly electroplated...
This paper investigates the properties of CuMn/Ru/SiO2. The optimal concentration of Mn in the CuMn alloy as a barrier layer in this structure is determined. The properties of CuMn/Ru/SiO2 are compared to those of CuMn/SiO2 and CuMn/Ta/SiO2. The electrical and material properties of CuMn (0–10 at.% Mn) alloy films deposited on SiO2, Ta, and Ru are studied. A diffusion barrier layer self-formed at...
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