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In this paper, we propose a new MOSFET design: Multi Layered Dielectric Four Gate MOSFET (G4-MLD MOSFET) and investigate its device performance through a two dimensional (2-D) analytical model by solving Poissonpsilas equation using parabolic potential profile approach. The 2-D analytical model gives physical insight into the electrical characteristics of this design in terms of surface potential...
A two-dimensional (2-D) analytical solution of electrostatic potential is derived for lightly doped Double Gate (DG) MOSFET in the sub-threshold region by solving Poissonpsilas equation using the parabolic profile approach. The analytical model evaluates surface potential, threshold voltage, sub-threshold slope and sub-threshold drain current. Further, to improve the gate control and reduce the gate...
An accurate non linear charge-control model of the two dimensional electron gas (2-DEG) of an insulated gate AlGaN/GaN HFET is proposed which incorporates the dominant effect of polarization induced charge at the AlGaN/GaN interface. It is based on new polynomial dependence of sheet carrier density on position of quasi Fermi level to consider the quantum effects and to validate it from sub threshold...
The electrical behavior of deca-nanometer ISE MOSFET with gate stack: ISEGaS has been investigated and a computationally efficient analytical model using Evanescent Mode Analyses (EMA), for solving two-dimensional Poisson's equation in the channel region, has been presented for accurate prediction of surface potential, electric field, subthreshold current and threshold voltage. An important short...
Two-dimensional (2-D) analytical modeling for a novel multiple region MOSFET device architecture-Tri-Material Gate Stack MOSFET-is presented, which shows reduced short-channel effects at short gate lengths. Using a three-region analysis in the horizontal direction and a universal depletion width boundary condition, the 2-D potential and electric field distribution in the channel region along with...
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