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Forward recovery characteristics have been reported in a 5 kV class SiC pin diode used for a high frequency inverter. The 5 kV class SiC pin diode obviously has low forward voltage overshoot and an extremely small voltage shift along with a higher forward current increase rate or junction temperature as compared to the Si fast diode. The minority carrier lifetime has also been evaluated from the forward...
The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200°C, a higher temperature than Si device's destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm2) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction of SiCGT, which was different from the destruction...
High overload inverters were developed by using SiC devices for the first time, although its realization by using Si devices had been difficult because of Si's low maximum Tj. The newly developed 100 kVA overload SiC inverter provides an overload capability rate of 200 % and can supply 300 kVA for up to 3 seconds. Moreover, the volume was downsized to 1/7.5 of the previous inverter and the 150 hour...
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