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The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
High overload inverters were developed by using SiC devices for the first time, although its realization by using Si devices had been difficult because of Si's low maximum Tj. The newly developed 100 kVA overload SiC inverter provides an overload capability rate of 200 % and can supply 300 kVA for up to 3 seconds. Moreover, the volume was downsized to 1/7.5 of the previous inverter and the 150 hour...
We present the results of a joint project to identify the origin of a discrepancy between the value of the Si lattice-parameter obtained by the Istituto Nazionale di Ricerca Metrologica and that obtained by the National Metrology Institute of Japan. The re-evaluation of diffraction in the laser interferometry indicates that misalignment of the interfering beams could account for the observed difference
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