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We report on the demonstration of a sub-diffraction-limited plasmonic laser at UV region by using the ZnO nanowire based on the semiconductor-insulator-metal (SIM) structure. At 77K, the laser with a threshold power of about 76MW/cm2 and the wavelength of 373 nm with an extremely small mode area below ?2/1000 was realized.
We demonstrated a novel air/semiconductor mirrors integrated distributed feedback lasers by focused ion beam technology. When two DFB lasers are powered together, an injection-locking operation can produce strong microwave signals up to 25.5 GHz.
The 25-km bi-directional 2.5Gb/s pulsed-RZ transmission in a quasi-color-free DWDM-PON with down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes (WRC-FPLDs) coherently injection-locking and pulsating by a gain-switched master WRC-FPLD after 200-GHz AWG channelization is demonstrated.
Recent progress on fabrication technology and demonstration of current injection GaN-based blue VCSELs are presented. Performance of current injection blue VCSELs with threshold current of 1.4 mA and emission wavelength of 462 nm are described.
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
Lasing characteristics of 12-fold quasi-periodic photonic crystal micro-cavity lasers are obtained and compared with triangular lattice photonic crystal lasers. An ultra-low threshold is observed and tolerance of fabrication imperfection in QPC lasers is investigated.
We have demonstrated the high operation current up to 400 mA for the laser lift-off InGaN/GaN LEDs on Cu heat sink with 3.5 fold increase in the light output power over the regular LEDs.
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