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β‐Ga2O3‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p‐NiO/n‐...
We present small-signal measurements on graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency, fT, and power gain cutoff frequency, fmax, profiles as a function of current density or gate bias. AlGaN/GaN high electron mobility transistors (HEMTs) are suitable candidates for mm-wave and THz amplifiers. However their transconductance,...
Recent progress in high throughput sequencing and bioinformatic analysis and other biochemical methods have fuelled our appreciation for the important role of microRNAs (miRNAs) in disease, fertility and development. These tiny RNAs were found to be potentially involved in various aspects of cellular processes of reproductive tissues by posttranscriptional regulation of protein coding genes. Mammalian...
We extend the implementation of proactive protection to pure IP protection schemes and test its performance over a real DWDM system and additional failure modes: PMD injection and mechanical disconnection.
A new protection scheme that takes advantage of integrated DWDM interfaces on routers to enable a near-hitless switchover of traffic from a failing working path to a protection path, using pre-FEC error statistics.
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