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A novel power Cu front side chip metallization for insulated-gate bipolar transistors (IGBTs) and freewheeling diodes (FWDs) enabling thick Cu wire wedge bonding on active area is reported. In the continuing race to higher power density, main limitations of IGBT power modules are given by short circuit robustness requirements of the IGBT and power cycling capability of the front side Al wedge bond...
In this work we will focus on the short circuit destruction of IGBTs after turn-off. Electro-thermal device simulations and experimental verifications have been carried out to study the failure mechanism and identify the improvement potential. Heat diffusion to the front and back side chip surfaces after the short circuit pulse causes temperature rises at the pn-junctions which in turn inject thermally...
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