The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Relatively low-frequency (< 3 MHz) capacitance-voltage measurement methods are quantitatively analyzed on their accuracy and applicability by both simulations and experiments for measuring ultrathin gate dielectrics with large leakage current. The effect of parasitic originates from the chuck stage of the measurement system is taken into account in the discussion. A novel technique is developed...
Hole transport and trapping in N/sub 2/O-nitrided oxides have been studied. It is shown that N/sub 2/O-nitridation of oxides suppresses hole injection into the oxides. The suppression of hole injection is a mechanism leading to the enhancement of reliability of the nitrided oxides under channel hot-hole and F-N stresses.
Electron capture and excess current after the substrate hot-hole injection into a 131 /spl Aring/ oxide have been studied. The gate current-gate voltage characteristics, drain current-gate voltage characteristics, and capacitance-voltage curves in p-channel MOSFETs were measured before and after the hole injection and after subsequent electron injection. Excess current obviously appeared under positive...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.