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This work explored a novel way to synthesize silicon carbide (SiC). Carbon ions at tens of keV were first implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using heavy xenon ion beams at high energy of 4 MeV with fluences of 5 ?? 1013 and 1 ?? 1014 ions/cm2 at elevated temperatures to play a role of annealing as an alternative of high-temperature thermal...
Various silicon-based microchannels with different internal surface morphology is investigated to grow CNTs (carbon nanotubes) on the surface of the pore wall which may enhance the electron emission. The morphology of the samples prepared under different conditions is determined by scanning electron microscopy (SEM). Parameters such as temperature, concentration of hydrofluoric acid, potential, current...
In this work, the effects of aluminum implantation on thin La2O3 films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (~ 6% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction...
Plasma-based technologies such as plasma immersion ion implantation and deposition (PIII&D) are widely used. In addition to the capability to alter the materials surface, novel microelectronic structures can be fabricated. In this invited paper, our recent research activities on the application of plasma technologies to microelectronics are reviewed. Silicon-on-insulator (SOI) is replacing conventional...
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