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In this contribution, results on the structural and electrical properties of high-kappa REScO3 (RE = La, Gd, Tb, Sm) and LaLuO3 amorphous thin films are presented. The study reveals that these oxides are potential candidates for future integration in MOSFETs. High dielectric constants up to 30 were measured for amorphous thin films of these materials, as well as low leakage current and low interface...
Long channel n-MOSFETs on thin SOI and sSOI substrates have been prepared integrating gadolinium scandate as high-kappa gate dielectric in a gate last process. The GdScCh films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveal well behaved output and transfer characteristics with high Ion/Ioff...
Starting out from our well established process for AlGaN/GaN HFETs, the authors discuss ways to enrich the process in order to fabricate metal-oxide-semiconductor HFETs (MOSHFETs) with a gadolinium scandate (GdScO3) insulation layer. In particular, adequate processing orders, various etching procedures and possible drawbacks of the GdScO3 deposition process on ohmic contacts are discussed. Making...
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