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The reduction of post annealing temperature for plasma activated dielectric bonding was achieved by using SiCN as dielectrics layer. The SiCN-SiCN bonding shows higher bond energy at 250 °C as compared to conventional SiOi-SiOi bonding. The surface and interface of the SiCN bonding dielectric layers were characterized by various quantitative and qualitative methodologies. This alternative bonding...
The introduction and use of ultra low-k dielectric materials in an attempt to achieve better die performance brought new challenges to the wafer singulation / dicing process. Ultra low-k dielectric materials can easily get damaged during conventional blade dicing due to their brittleness. Thus, there is a need to investigate alternative or more advanced dicing techniques that can deliver successful...
In a specific 3D die to die stacking scenario using a Si interposer technology for high band width interconnect applications1, wherein dies including the Silicon interposer were stacked first before placing it onto the substrate, posts a challenge on pre-assembly processes. This paper presents what and which areas the challenges are and reports on the solution found that enabled the pre-assembly processes...
In this work, we present a cost effective Cu electroless (ELD-Cu) metallization scheme in which through-silicon vias (TSVs), can be scaled towards higher aspect ratios. We successfully integrated 30 nm ELD-Cu on 15 nm Ru in 3×50 µm TSVs on 300 mm wafer scale and found excellent electrical reliability. Cost calculations revealed the major impact of the implementation of the platable Ru liner material...
High aspect ratio through-silicon vias (3 µm diameter by 50 µm depth) have been filled by standard Cu plating process on electroless deposited (ELD) Cu seed layers on conformal liners of Ru or Co. The in-field Cu overburden that was needed to achieve electrochemical fill on the ELD-Cu seed was 600 nm. This is much lower than would have been needed in a conventional scheme with a PVD-Cu seed (of ∼...
A conformal diffusion barrier was formed in a high aspect ratio through-silicon via (TSV) using electroless plating. Dense adsorption of Pd nanoparticle catalyst on SiO2 assisted the formation of a thin electroless CoWB layer, on which an electroless Cu seed layer could be deposited. The adhesion strength of the CoWB layer was improved with addition of adequate amount of saccharine and conformal deposition...
High aspect ratio through-Si vias (2 µmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless...
In this paper, based on circle detection and fitting, an accurate long-distance positioning system using laser range finders (LRFs), is proposed. To utilize orientation-invariant property of the circle, a cylinder shaped bar is chosen as the reference target of the positioning system. After obtaining the arc shaped contour of the cylindrical target scanned from LRF, given the prior information of...
All-wet fabrication process using electroless deposition of barrier and Cu seed layers has been achieved for a high aspect ratio through-Si via (TSV). Formation of thin barrier metal layer of NiB and CoB is possible by the use of nano particles catalyst which is densely adsorbed on SiO2 of TSV sidewall. Silane coupling agent with 3-aminopropyl-triethoxysilane is effective for enhancement of adsorption...
In this paper, an accurate long-distance position measurement system using laser range finders (LRFs), which can be used for surveys in construction fields is proposed. Since the LRF is a sensor which can measure distance to surfaces of objects by radiating laser beams from itself and receiving the reflected ones, data obtained from the LRF are nothing more than the contours of objects. For this reason,...
Intelligent Space (iSpace) is a space which has ubiquitous sensory intelligence. In iSpace, positions of objects inside the space are one of the most basic information to implement various applications. This paper describes a method to localize the target objects using distributed laser range finders. Since data from a laser range finder is only distances and angles to object surfaces, we need to...
Low cost and low temperature fabrication process is required for TSV. In this study, we propose a low temperature deposition of barrier and copper seed layers by wet process only using electroless plating. Moreover, we use AuNPs as a catalyst which is densely adsorbed on SiO2 sidewall of TSV with SAM. We succeeded in conformal deposition of barrier and seed layers, and this method is effective for...
In this paper, inspired by RANSAC and Hough Transform voting procedure, a modified RANSAC algorithm of detection of cylindrical reference target using LRF for positioning system is proposed. Utilizing the orientation-invariant property of the circle, cylindrical shaped bar is chosen as the reference target of the positioning system. The given radius of the cylinder and convex arc shaped contour observed...
This paper describes an automated inspection robot for detecting tile exfoliation and a new diagnostic method for determining its existence and extent. The robot moves quickly along a vertical wall and stops to detect a tile's inner condition using a hammering sound. Tile separation commonly comprises outer exfoliation where the tile separates from the mortar concrete and inner exfoliation where the...
In this paper, we evaluate the performance of iSCSI-APT (iSCSI with Automatic Parallelism Tuning) in a real long-fat network, SINET3 (Science Information Network 3). iSCSI-APT is an initiator-side extension to the iSCSI protocol, and it automatically adjusts the number of multiple iSCSI connections for maximizing the iSCSI throughput. SINET3 provides a variety of advanced network services. One of...
In this paper, we propose BDL-APT (block device layer with automatic parallelism tuning) that maximizes the throughput of IP-SAN protocols in long-fat networks. BDL-APT parallelizes data transfer using multiple IP-SAN sessions at a block device layer, and adjusts the number of active IP-SAN sessions automatically according to network status. A block device layer is a layer that receives read/write...
We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO2. Furthermore, we found that the addition of Cl ions to SPS- and PEG-plating bath significantly improved the conformal deposition property even...
In this paper, we propose an iSCSI-APT (iSCSI with automatic parallelism tuning) that maximizes iSCSI throughput in long-fat networks. In recent years, as a protocol for building SANs (Storage Area Networks), iSCSI has been attracting attention for its low cost and high compatibility with existing networking infrastructure. However, it has been known that iSCSI throughput degrades in a long-fat network...
In this paper, we present our implementation of GridFTP-APT (GridFTP with automatic parallelism tuning), an extension to GridFTP for optimizing its performance in a long-fat network. GridFTP has been used as a data transfer protocol for effectively transferring a large volume of data in Grid computing. GridFTP supports a feature called par allel data transfer that improves throughput by establishing...
Particles between metal lines were detected on etched wafers in a process tool with an Al2O3 window on top of the chamber. The particle was speculated to be derived from fluorinated Al2O3 surface in the chamber. In this paper, an attempt was described to reduce that kind of particles by using Y2O3 material within the chamber.
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