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A low-voltage high-speed bulk-CMOS SRAM that operates over 100MHz at 0.5V, for the first time, is proposed. A novel 8-transistor (8T) memory cell with a complementary read port (C-RP) improves the read speed by enabling differential bit-line sensing, while the conventional 8T SRAM drives the bit line with a single read port (S-RP). The cell layout of the C-RP SRAM has point symmetry and a small area...
Error detection FFs for dynamic voltage scaling (DVS) has been proposed. This technique controls the clock phase based on the timing slack, and reduces the energy consumption by 19.8% compared to non-DVS. The error signal latency is shortened to 6.3%, the area and power penalties for delay buffers on short paths become 35.0% and 40.6% lower compared to the conventional DVS.
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