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This paper introduces a novel half-select resilient dual write wordline 8T (DW8T) SRAM with a sequential writing technique. The process scaling increases random variation that degrades SRAM operating margins, for which the proposed DW8T cell presents two features: half-VDD precharging write bitlines and dual write wordlines. The dual write wordlines are sequentially activated in a write cycle, and...
This paper presents a novel disturb mitigation scheme which achieves low-power and low-voltage operation for a deep sub-micron SRAM macro. The classic write-back scheme overcame a half-select problem and improved a yield; however, the conventional scheme consumed more power due to charging and discharging all write bitlines (WBLs) in a sub block. Our proposed scheme consists of a floating bitline...
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