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Cu(In, Ga)(S, Se)2 (CIGSSe) films were grown on Mo/soda-lime glass substrates in a three-stage process using a molecular beam epitaxy apparatus equipped with an rf-cracked S-radical beam source. CIGSSe films have been studied for their application in the development of solar cells with wide-bandgap semiconductors. The S/(S+Se) composition ratios in the fabricated films were determined from electron...
Cu(In1-xGax)Se2 (CIGS)-based solar cells have emerged as one of the most promising candidates for high-efficiency low-cost thin-film solar cells, and a significant improvement in solar cell performance has been reported with conversion efficiencies as high as eta=19.9%, though the efficiencies of commercial modules are limited to eta=11-12%. In Japan, the efficiency goal for 2030 is set to be eta=25%...
We study the electrical properties of deep defects in Cu(In,Ga)Se2 (CIGS) by transient photocapacitance (TPC) spectroscopy by varying the Ga concentration in CIGS. Regardless of the Ga concentration, the TPC spectra of CIGS thin-film solar cells at 100 K exhibited a defect level with an optical transition energy of about 0.8 eV. The TPC signals for defect level were quenched by increasing temperature...
We have attempted an in-line three-stage process for the deposition of CIGS (CuInGaSe2) absorber layers. The allowed growth area of CIGS deposition apparatus is 30 × 30 cm2, and the compositional uniformity and distribution of cell performance have been investigated. Large-size grains and band-grading typical for the three-stage process have been observed. The composition ratios and the performance...
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