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In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivability DIBLs are below 40 mV/V and subthreshold swings are nearly ideal values showing no temperature dependency. The driving currents of 1.4 mA/mum for...
As planar MOSFETs are scaled down, it is more and more difficult to achieve the scaled transistors with high performance. One of the key issues must be large source/drain (S/D) resistance as well as short channel effects (SCEs) (Ghani et al., 2001). These are in trade-off relation because shallow junction for reducing SCEs causes the increase of S/D resistance. One of the solutions to solve both problems...
We proposed and successfully demonstrate multi-functional Si-on-ONO (SOONO) MOSFETs. As a high performance transistor and embedded 2-bit flash memory, they show the reasonable characteristics. SOONO MOSFETs act as ultra thin body transistor with self-limited shallow junction, resulting in good SCE immunity and high driving currents, 737muA/mum for nMOS and 330muA/mum for pMOS at |VGS| = |VDS| = 1...
For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiOx) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiOx gate dielectric, not only reduces gate leakage current but also improves ION/IOFF ratio of PFET to 108. Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown...
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