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As DRAM cell pitch size scales, the DRAM cells have required characteristics of high performance transistors. In this paper, we proposed and successfully demonstrated high performance silicon-on-ONO (SOONO) cell array transistors (SCATs) for 512Mb DRAM cell array application. They have advantages of SOI substrate and 3-D hi-gate as well as process simplicity. From those advantages, they have low Ioff...
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