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The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300V) and large current (40A) were fabricated. In addition, we have succeeded in fabricating the larger current (300A) 4H-SiC trench MOSFET with low-on resistance (2.6mΩcm2). And, regarding high-temperature operation, SiC IPMs can...
The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300 V) and large current (40 A) were fabricated. In addition, we have succeeded in fabricating the larger current (300 A) 4H-SiC trench MOSFET with low-on resistance (2.6 mΩ cm2). And, regarding high-temperature operation, SiC IPMs...
We have successfully demonstrated the CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate, by using direct wafer bonding (DWB), for the first time. Ni-based metal S/D allows us to fabricate high performance nMOSFETs and pMOSFETs simultaneously at the single-step S/D formation process. The fabricated InGaAs nMOSFET and Ge...
We have demonstrated extremely-thin-body (ETB) (3.5 and 9 nm) InGaAs-on-insulator (InGaAs-OI) MOSFETs on Si substrates with Al2O3 ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding (DWB). We have found that the ETB highly-doped InGaAs-OI n-channel MOSFETs without p-n junction can perform a normal MOSFET operation under front- and back-gate configuration and the double-gate operation...
We have successfully demonstrated III-V-semiconductor-on-insulator (III-V-OI) MOSFETs with ALD-Al2O3 buried oxide (BOX) layers under front-gate operation, for the first time. The high electron mobilities of ~3000 and ~2000 cm2/Vs were achieved for i-InGaAs and p-InGaAs channels, respectively, formed on Al2O3/Si. Also, we have found that the InGaAs-OI channel bottom condition (the InGaAs-OI/BOX interface)...
The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.
Defect-free n-type InP source/drain for III-V nMOSFETs was successfully formed by epitaxial regrowth at 610degC. The impurity concentration of 1times1019 cm-3 with the S/D junction steepness of around 10 nm/dec. was obtained.
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