The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports an analysis of the STI-induced mechanical stress-related breakdown characteristics of the 40 nm PD SOI NMOS device with a closed-form formula. As verified by the experimentally measured data, the 2D simulation results and the closed-form formula, the breakdown voltage becomes higher for the device with a smaller S/D length of 0.17 ??m due to the weaker function of the parasitic...
This letter reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the 40-nm PD-SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, breakdown occurs at a higher drain voltage for the device with a smaller S/D length of 0.17 mum due to the weaker function of the parasitic bipolar device, which is offset by the stronger...
The power-law model provides a relatively good correlation between the wafer-level (WL) time-dependent dielectric breakdown (TDDB) test (highly accelerated) conducted on test structures and high-temperature operating life (HTOL) test (moderately accelerated) conducted on product. This is true when WL stress is configured identically to HTOL stress, and the difference in oxide area between the two...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.