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The reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by the fluorine plasma treatment technique was investigated by applying OFF-state and ON- state long-term high-electric-field stress. A moderate negative shift (-0.25 V) was observed in the threshold voltage after 288 hours of stress. This shift, however, can be eliminated with an enhancement/depletion dual-gate configuration which effectively...
In this work, we report the microwave noise characterization of E-mode double-heterojunction HEMT (DH-HEMT). The E-mode DH-HEMT shows reduced noise figure compared to its D-mode counterpart, mainly owing to the lower gate leakage current achieved by the Schottky barrier enhancement in fluorine-plasma treated gate region and the favorable bias conditions for the E-mode HEMT.
We report a low-density drain HEMT (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced current collapse. The LDD region is created by introducing negatively charged fluorine ions in the region between the gate and drain electrodes, effectively modifying the surface field distribution on the drain side of the HEMT without using field plate electrodes. Without changing the device physical...
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