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We profiled the lateral charge distribution in a split-gate silicon-oxide-nitride-oxide-silicon (SONOS) memory device with a short gate length (~ 40 nm) after channel hot-electron (CHE) injection or band-to-band tunneling-induced hot-hole (BTBT-HH) injection. The profiles were drawn from measurements and analysis of three types of currents, namely, channel, gate-induced drain leakage, and word-gate-modulated...
We propose a new simple method for lateral charge profiling of split-gate SONOS memory to separate trapped charge densities near and far from drain. Retention loss due to electron/hole mismatch is successfully reproduced with two hole components near and far from the drain that this method evaluates. The hole component far from the drain dominates the component near the drain in a scaled split-gate...
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