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A novel design approach to a wideband GaAs microwave monolithic amplifier is presented using the principle of feedback and active matching networks. The multistage amplifier utilises a unique biasing circuit which requires only one biasing voltage. A 6-18 GHz multistage amplifier has been demonstrated using the proposed approach. The amplifier has low input/output VSWR, a maximum of 20 dB gain and...
Sub-half-micron gate GaAs FET's have been used to fabricate a MIC balanced amplifier module with 4.2 dB of minimum gain over 26.5-40.0 GHz. The module and devices are described and data is presented for gain, VSWR, noise figure, and power on the module.
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