Search results for: A. Gombar
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Silicon millimeter wave integrated circuit (SIMMWIC) technology has been developed utilizing novel fabrication techniques. These techniques have been applied to IMPATT and PIN diode fabrication schemes, the results of which are presented.
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IEEE Transactions on Microwave Theory and Techniques > 1982 > 30 > 6 > 875 - 882
The development of high-power low-frequency diodes, conditions for their operation, and results measured in actual circuits are described. Harmonic distortion at 500 kHz and 2 MHz has been found to decrease with increasing diode lifetime and forward-bias current. Large reverse bias voltages are necessary at low frequencies to keep the RF voltage swing from penetrating the forward conduction region...
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The application of PIN diodes in high-power systems at frequencies as low as 500 kHz requires the use of diodes with intrinsic layers of long carrier lifetimes, operation at low rf-to-bias current ratios, and large reverse bias voltages. The development of suitable diodes, operating conditions, and test results in actual circuits are described.
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Electronics Letters > 1981 > 17 > 19 > 707 - 708
A new processing technique has been developed for the fabrication of high-Q and high-voltage varactor diodes. The process utilises ion implantation and laser annealing for heavily-doped p++ and n++ layers and epitaxial growth for low impurity concentrations. The technique provides good yield and repeatability, and it has allowed fabrication of varactor diodes which have breakdown voltages of 120 V...
