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The evaluation of new equipments developed at the Tohoku University and based on a very low electron temperature microwave-excited high-density plasma is presented through the study of the Flicker noise. These new equipments which are working with very low electron temperature and presenting very useful features, such as an oxide growth rate regardless of the crystallographic orientation of the silicon,...
In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH- ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step...
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