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A 1-transistor SRAM on bulk substrate is presented. The device is fabricated in 28 nm foundry baseline process with an additional buried N-well (BNWL) implant. The unit cell consists of a lateral MOS for memory access operations and intrinsic vertical open-base bipolar structures for self-latch function. The bit cell operation and the disturb immunity are verified at high temperature. Using 28 nm...
3D RRAM array suffers more serious reliability issues than 2D array due to the additional dimension involved. This paper systematically assesses the cell-location-dependent write-access (selected cells) and disturbance issues (unselected cells) for a 3D vertical RRAM array. Using a combination of experiments and simulations, a methodology is developed to enable array-level evaluation by conducting...
We propose optical switch architecture based on transition metal oxide material. It use electrical field to change oxygen vacancy distribution and its optical property such as absorption coefficient. We demonstrate the absorption coefficient of such device can be latched in binary state, which is useful for optical networking and interconnect applications.
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