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A 1-transistor SRAM on bulk substrate is presented. The device is fabricated in 28 nm foundry baseline process with an additional buried N-well (BNWL) implant. The unit cell consists of a lateral MOS for memory access operations and intrinsic vertical open-base bipolar structures for self-latch function. The bit cell operation and the disturb immunity are verified at high temperature. Using 28 nm...