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Today, measurement of 65nm CMOS and 130nm-based SiGe HBTs technologies demonstrate both fT (current gain cut-off frequency) and fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100nm III-V HEMT. This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In...
Thanks to the competitive performances of CMOS and BiCMOS transistors, we are able to integrate the complete RF front-end on a same silicon substrate, including the antenna. In this paper, we describe a state-of-the-art measurement setup dedicated to the full characterization of silicon integrated antennas. This anechoic chamber is able to address radiation pattern and gain extraction as well as return...
This paper focuses on an integrated fractal antenna on HR SOI silicon substrate. The antenna is based on a double-slotted dipole antenna. A technology overview is provided in the first section. Then the concerned designed resonant structures are depicted and compared. Simulations are performed on Ansoft HFSS 3D electromagnetic software, and measurements are completed with an on-wafer test bench.
The low resistivity substrate that is used in bulk silicon processes (CMOS and BiCMOS) limits the integration of high-quality passives components and gives rise to severe substrate coupling issues. This paper shows how to take advantage of HR SOI to improve RF circuit performances as well as the effectiveness of HR SOI to reduce substrate coupling. Potentiality of mm-wave passive integration is also...
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