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RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, we see significant research concerning FEM integration on silicon. In this quest, SOI technology has already addressed two key blocks, the antenna switch and the power amplifier. In this paper, we will focus...
SOI technology is now emerging as a promising one for the integration of RF front-end modules, mainly for antenna switches and power amplifiers (PAs). This paper reviews the performances of STMicroelectronics 0.13 mum High Resistivity (HR) SOI CMOS technology and discusses the potentiallity for SOI technology to capture RF front-end business in the near future.
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