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In this paper, I present recent progresses on epitaxial growth and material characterizations of novel dilute III-PBi and III-SbBi. High quality dilute bismide thin films can be epitaxially grown by molecular beam epitaxy in a narrow growth parameter window. Up to 13% and 4.3% Bi is incorporated in GaSbBi and InPBi, respectively, and majority Bi atoms are at the lattice position as confirmed by Rutherford...
GaSb1−xBix thin films with 0 ≤ x ≤ 13% were grown by molecular beam epitaxy. The Bi content, lattice expansion and crystal structure were investigated by Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. Photoluminescence spectra of the GaSb1−xBix alloys with various Bi contents were studied at 77 K. The bandgap energy of GaSb1−xBix is decreased effectively...
Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi...
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