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A rigorous numerical simulation of the spin field effect transistor (spinFET) is implemented. This method includes for the first time the effects of both channel spin relaxation and tunnel barriers between the source/drain and the channel. The key device metric, magnetoresistance ratio (MR), is found to be lower than earlier predictions which did not include these effects. Adjusting contact parameters...
The asymmetric source/drain extension (ASDE) transistor can be a suitable option because of improved short channel effects in technology nodes beyond 32 nm. In this paper, we have analyzed the impact of asymmetric drain extension reduction on the device metrics, namely, gate-to-drain capacitance, drain current, subthreshold leakage, and gate tunneling leakage current. Also, analytical models have...
With technology scaling, elevated temperatures caused by increased power density create a critical bottleneck modulating the circuit operation. With the advent of FinFET technologies, cooling of a circuit is becoming a bigger challenge because of the thick buried oxide inhibiting the heat flow to the heat sink and confined ultra-thin channel increasing the thermal resistivity. In this work, we propose...
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