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In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light output performance with threshold currents ~2.4 mA, and the slope efficiencies ~0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than ~30% when the substrate temperature...
We report a low Ith (/spl sim/1.5 mA), high power (>5 mW) and speed performance (10 Gb/s operation) single mode GaAs VCSEL employing O+ implantation, MOCVD re-growth and selective oxidation.
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