The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The process technology of fully passivated T-shaped 0.18 mu m gate length InAlAs/InGaAs/InP HFETs is described. Using material selective etchants, devices realised with this process yielded gate breakdown voltages in excess of 8 V and drain source breakdown voltages in excess of 5 V. The excellent gate characteristics lead to a noise figure of 0.75 dB at 18 GHz with 13 dB associated gain. The extrapolated...