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State-of-the-art 0.15- mu m-gate PHEMT (pseudomorphic high-electron-mobility transistor) devices, self-biasing current sources, source follower interstage, resistive feedback, and on-chip matching have been used to make an unique MMIC (monolithic microwave integrated circuit) LNA (low noise amplifier). Typical gain of 21 dB, VSWR (voltage standing wave ratio) of 2:1, and P-1-dB output power of 7 dBm...
Vertical p-n- rho transistors have been fabricated using a four mask, low cost quasi-selfaligned process with submicrometre feature sizes. The resulting monocrystalline emitter devices achieve f/sub t/ greater than 9 GHz and f/sub max/ greater than 15 GHz with BV/sub ceo/ greater than 13 V. These discrete p-n- rho 's were used successfully as active loads for a monolithic n- rho -n opamp to achieve...
The design and implementation of a submicron-silicon bipolar parallel processing master-slave D-type flip-flop decision circuit, operating at data rates as high as 11 Gbit/s is described. This is the fastest reported decision circuit for silicon bipolar technology. The ICs used in the hybrid circuit were fabricated using a 0.6 mu m, non-polysilicon emitter technology, and mounted in a package employing...
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