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Rectangular InP corrugations of 70 nm pitch and 40 nm depth were buried with GaInAs by OMVPE so as to preserve the rectangular shape. A low regrowth temperature and short heating up time in an atmosphere of high PH/sub 3/ partial pressure are effective in the suppression of thermal deformation during regrowth.<<ETX>>
Corrugations of 70 nm pitch and 100 nm depth were formed on InP using electron beam lithography and wet chemical etching giving the material selective and anisotropic qualities. For this purpose, a thin GaInAs layer grown by MOVPE was used as an etching mask to suppress the undercut etching so as to form very fine structures.<<ETX>>
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