The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
AlGaN/GaN-based HFETs are very attractive for RF and power applications due to their superior properties, such as large critical electric field, a high two-dimensional electron gas (2DEG), and a saturation velocity compared to Si-, GaAsand SiC-based devices. State-of-the-art performances of the AlGaN/GaN HFET already showed that f?? = 160 GHz and fmax =190 GHz, and outpower = 32.2 W/mm, which were...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.