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The average transmittance (Tavg%) and optical energy gap (Eg) increased rapidly with increasing O2 flow. The resistivity significantly increased with increasing O2 flow for annealing temperature at 200°C, however the resistivity did not change with the O2 flow for the annealing temperature at 400°C. Hall mobility reached the highest value of 11.18 cm2V−1sec− when the O2 flow is at 5 sccm and the carrier...
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