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The influence of proton irradiation on current–voltage characteristics, N d −N a values and parameters of deep centres in 6H–SiC pn structures grown by sublimation epitaxy has been studied. The irradiation was carried out with 8 MeV protons in the range of doses from 10 14 to 10 16 cm −2 . Irradiation with a dose of 3.6×10 14 cm −2 leaves the...