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In this paper, segmented edge saturation (SES) is proposed as a novel method to design high-performance tunnel FETs (TFETs) using smooth graphene nanoribbon (GNR). When the edges of a smooth GNR are saturated by different elements in its different segments, the energy gaps (${E}_{g})$ of these segments can be tuned. Therefore, the tunneling and blocking effects are achieved simultaneously by reducing...
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