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25nm NAND technology-based 64Gb 3bpc NAND Flash memory with die size of 130mm2 (6.15GB/cm2) is presented. The design including the array architecture is optimized for 25nm process technology while achieving world class performance of 100μs tRD, 2300μs tPROG for write throughput of 6.8MB/s with reliability meeting business requirements.
A 3.3V 32Gb NAND-Flash memory with 3b/cell is demonstrated in 34nm technology. The device features a programming throughput of 6MB/s on blocks configured as 3b/cell mode and can dynamically switch up to 13MB/s in 2b/cell mode. A new quad-plane architecture and an optimized programming algorithm are adopted to achieve the design targets.
As applications for NAND continue to grow and cost remains a primary market driver, it is necessary to deliver increased storage capacities at smaller process lithography while meeting high performance requirements. Design plays a pivotal role by providing architectures and design solutions that minimize the impact of bitline and wordline resistance and capacitance (RC) requirements and cell-reliability...
A 2b/cell flash memory in 90 nm triple-well CMOS technology achieves 1.5 MB/s programming and 166 MHz synchronous operation. The design features 2-row programming, optimized program control hardware, 3 transistor x-decoder with negative deselected rows and configurable output buffers. The die is 42.5 mm/sup 2/ with a cell size of 0.076 /spl mu/m/sup 2/.
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