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The etching of n-type silicon in hydrofluoric acid solutions containing active oxidising agents has been studied. The effect of different parameters on the etch rate of silicon in these solutions has been examined. Based on electrochemical experiments coupled to in situ real-time measurements by infrared spectroscopy, the evolution of surface chemistry during etching of Si has been investigated. It...
The surface of Si, Ge and GaAs electrodes has been investigated by infrared spectroscopy, which provides in situ information on chemical species at the electrochemical interface. Special attention was paid to adsorbed hydrogen and hydroxyl and to oxide formation. In fluoride medium and at open circuit potential (OCP) the Si surface is completely hydrogenated and is oxidised only upon imposing a large...
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