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This work will discuss the design of analog circuits for processing the signals from deep N-well monolithic CMOS sensors and from high resistivity substrate pixel detectors. Several options for the design of the SuperB Layer0 are being studied. Hybrid pixel detectors are nowadays a robust and mature technology for the innermost vertex detector layer, but they require a relatively large material budget...
This paper is devoted to the study of total ionizing dose effects in deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) for particle tracking fabricated in an STMicroelectronics 130 nm process. DNW-MAPS samples were exposed to γ-rays up to a final dose of 1100 krad(SiO2) and then subjected to a 100°C annealing cycle. The origins of degradation in charge sensitivity and equivalent noise...
We report on a new approach in the design of CMOS monolithic active pixel sensor (MAPS). We realized a first MAPS prototype chip implementing at the pixel level the standard processing chain commonly used for capacitive detectors. The in-pixel signal processing channel includes a low noise charge preamplifier, a shaper, a discriminator and a latch. This readout approach, realized exploiting the triple...
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