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A low-power fully-integrated transceiver for K-band wireless communication was developed using 0.18 μm SiGe BiCMOS technology. Transformers are used to stack circuit blocks directly and to connect signals in multiple paths, and a balun is used to combine differential signals efficiently. These passive-interstage circuit schemes make it possible to reduce power dissipation without degradation in performance...
24-GHz band amplifiers with a high image-rejection function have been designed and characterized using a 0.18-??m SiGe BiCMOS technology. To achieve a higher image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region, an amplifier configuration with a notch-filter type feedback circuit has been proposed. A low noise amplifier (LNA) and a driver amplifier (DA) were developed to eliminate...
A driver amplifier with a high image-rejection function was developed in 0.18-??m SiGe BiCMOS technology to create a 24-GHz band RF transmitter. The proposed configuration for the driver amplifier uses a notch feedback circuit and a common-emitter amplifier stage and is considered to have a high image-rejection ratio (IRR) and high power-handling capability in the quasi-millimeter-wave frequency region...
A 20-GHz 1-V VCO with dual-transformer configuration and a self-stabilized pseudo-static frequency divider were developed using 0.18-mum SiGe BiCMOS technology. For the VCO, a combination of two types of transformers, which exhibit high-input impedance and capacitive-input impedance, contributes to the output of two sets of differential signals for mixers and the divider, maintaining both a wide frequency-tuning...
An image-rejection low-noise amplifier (LNA) based on 0.18-mum SiGe BiCMOS technology was developed in order to create a 24 GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency...
Design techniques for a low-power mixer operating in the quasi-millimeter-wave frequency region were developed. A pseudo-stacked configuration and a pre-biasing technique, to reduce supply voltage and dynamic current consumption, respectively, were introduced. Furthermore, a gain-boosting technique, which actively utilizes a parasitic resonant caused by a transformer and parasitic capacitor, improves...
A 27-GHz voltage-controlled oscillator MMIC (VCO-MMIC), featuring low phase noise of -115 dBc/Hz at a 1-MHz offset frequency and large output power of +3.7 dBm with low DC-power dissipation of 111 mW, was developed using a 0.18-mum SiGe BiCMOS process. A novel merged-transformer matching circuit, in which an inductor in an oscillation loop is reused as a primary inductor of the transformer, contributes...
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