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The influence of a graphene oxide (GO) layer on Pt/Ta2O5−x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5−x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for adjusting the low resistance states without changing the high resistance states. Controlling GO layer...
We present the oxygen ion drift-based resistive switching features of TiO x /TiO y bi-layer homo-junctions. The TiO x layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO 2 , while the TiO y layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were...
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