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The integration of lanthanum lutetium oxide (LaLuO3) with a n value of 30 is, for the first time, demonstrated on strained and unstrained SOI n/p-MOSFETs as a gate dielectric with a full replacement gate process. The LaLuO3/Si interface showed a very thin silicate/SiO2 interlayer with a Dit level of 4.5 × 1011 (eV · cm2)-1. Fully depleted n/p-MOSFETs with LaLuO3/TiN gate stacks indicated very good...
In this contribution, results on the structural and electrical properties of high-kappa REScO3 (RE = La, Gd, Tb, Sm) and LaLuO3 amorphous thin films are presented. The study reveals that these oxides are potential candidates for future integration in MOSFETs. High dielectric constants up to 30 were measured for amorphous thin films of these materials, as well as low leakage current and low interface...
Starting out from our well established process for AlGaN/GaN HFETs, the authors discuss ways to enrich the process in order to fabricate metal-oxide-semiconductor HFETs (MOSHFETs) with a gadolinium scandate (GdScO3) insulation layer. In particular, adequate processing orders, various etching procedures and possible drawbacks of the GdScO3 deposition process on ohmic contacts are discussed. Making...
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